AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3-5 μm spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds

摘要

Epitaxial growth of Al _uGa _(1-u-x)In _xAs _ySb _(1-y) and Al _uCa _(1 - u)As _ySb _(1-y) solid solutions has been investigated. Epitaxial layers with the compositions 0.02 & u & 0.11, 0.88 & x & 0.93, and 0.88 & y & 0.98 have been grown on InAs substrates by metal-organic vapor-phase epitaxy at low pressure (76 Torr) and at the ratio of the sum of partial pressures of compounds of fifth-group elements to that for compounds of third-group elements V/III = 3.6-6. At a lattice mismatch of 1 × 10 ~(-3), the half-widths of the rocking curves for the best samples were 15 arcsec for substrates and 66 arcsec for layers.