The response characteristics of a simple hydrogen-sensitive structure based on semi-insulating single crystal gallium arsenide with planar palladium electrodes deposited onto the oxidized substrate surface are studied. It is demonstrated that such structures exhibit a fast response to hydrogen present in the gas phase. The sensitivity can be increased by growing, prior to the electrode formation, an intermediate epitaxial GaAs film with built-in strained quantum-confined layers of InGaAs and InAs onto the semi-insulating GaAs substrate.
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