PROCESS OF MANUFACTURE OF GALLIUM ARSENIDE STRUCTURES FOR INTEGRATED CIRCUITS ON BASE OF SCHOTTKY FIELD-EFFECT TRANSISTORS

摘要

FIELD: SHF devices. SUBSTANCE: buffer layer is formed on gallium arsenide substrate by three-four times repeated successive growth of undoped regions, each being composed of two sublayers with concentration of deep levels E12n₁= 10¹² cm^-2 and n₂= 10¹⁴. EFFECT: facilitated manufacture. 1 tbl