Simple Theoretical Analysis of the Field Emission from Quantum Wire Effective Mass Superlattices of Heavily Doped Materials

摘要

In this paper an attempt is made to study the field emission (FE) from quantum wire effective mass superlattices of heavily doped semiconductors (QWHDEMSL) on the basis of newly formulated electron dispersion laws, taking QWHDEMSL of GaAs/AlGaAs, CdS/CdTe, PbTe/PbSe and HgTe/CdTe respectively. It appears that field emitted current oscillates with changing film thickness in periodic manner. We note that HgTe/CdTe QWHDEMSL exhibits a maximum field current as compared with that of the others. The field current dies beyond 10~9 m~(-1) for CdS/CdTe QWHDEMSL. The cut in field for HgTe/CdTe QWHDEMSL is nearly 10~6 Vm~(-1) rather than that of CdS/CdTe which is beyond 10~8 Vm~(-1). With varying electron degeneracy, a change is reflected in the FE through the redistribution of the electrons among the size-quantized levels. It may be noted that at the transition zone from one sub band to another, the height of the peaks between any two sub-bands decreases with the increasing in the degree of quantum confinement and is clearly shown in all the curves. The content of this paper finds two applications in the field of quantized materials.