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首页> 外文期刊>Ultramicroscopy >Electron beam lithography-assisted fabrication of Au nano-dot array as a substrate of a correlated AFM and confocal Raman spectroscopy
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Electron beam lithography-assisted fabrication of Au nano-dot array as a substrate of a correlated AFM and confocal Raman spectroscopy

机译:电子束光刻辅助制造金纳米点阵列作为相关原子力显微镜和共聚焦拉曼光谱的基质

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This paper documents a study of an Au nano-dot array that was fabricated by electron beam lithography on a glass wafer. The patterns that had features of 100 nm dots in diameter with a 2-mu m pitch comprised a total area of 200 X 200nm~2. The dot-shaped Cr underlayer was open to the air after developing Poly(methyl methacrylate) (PMMA). When dipped into the Cr etchant, the exposed Cr layer was eliminated from the glass wafer in a short period of time. In order to ultimately fabricate the Ti/Au dot arrays, Ti and Au were deposited onto the arrays with a thickness of 2 and 40 nm, respectively. The liftoff procedure was carried out in the Cr etchant using sonication in order to completely remove the residual Cr/PMMA layer. The fabricated Au nano-dot array was then immersed in an Ag enhancing solution and then into an ethanol solution containing (N-(6-(Biotinamido)hexyl)-3'-(2'-pyridyldithio)-propionamide (Biotin-HPDP). The substrate was analyzed using a correlated atomic force microscopy (AFM) and confocal Raman spectroscopy. Through this procedure, position-dependent surface-enhanced Raman spectroscopy (SERS) signals could be obtained.
机译:本文研究了通过电子束光刻在玻璃晶圆上制造的Au纳米点阵列。直径为100 nm点且间距为2μm的图形的总面积为200 X 200nm〜2。在显影聚甲基丙烯酸甲酯(PMMA)之后,点状的Cr底层暴露在空气中。当浸入Cr蚀刻剂中时,暴露的Cr层在短时间内从玻璃晶片上除去。为了最终制造Ti / Au点阵列,将Ti和Au分别以2和40 nm的厚度沉积到阵列上。为了完全去除残留的Cr / PMMA层,在Cr蚀刻剂中使用超声进行了剥离程序。然后将制成的Au纳米点阵列浸入Ag增强溶液中,然后浸入含有(N-(6-(Biotinamido)己基)-3'-(2'-吡啶基二硫代)-丙酰胺(Biotin-HPDP)的乙醇溶液中通过相关原子力显微镜(AFM)和共聚焦拉曼光谱分析该基板,通过该程序,可以获得位置依赖的表面增强拉曼光谱(SERS)信号。

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