Response analysis for identifying the origin of photo-modulated current contrasts in scanning tunneling microscopic imaging semiconductor surfaces

摘要

Inhomogeneities in semiconductor solids can be imaged by two-dimensional mapping of the amplitude of periodically modulated tip current in scanning tunneling microscopy that is induced by illumination of semiconductor samples with a chopped light. It has been shown that it is possible to distinguish between plural origins of the photo-modulated current by analyzing the response properties of the current signal. A judicial choice of the modulation frequency is important for the required contrasts to be obtained.