The roles of shallow and deep levels in the recombination behavior of polycrystalline silicon on glass solar cells

摘要

The recombination current in polycrystalline silicon on glass solar cells can be modeled by the superposition of two processes, one which involves only shallow electronic levels and another which occurs via deep levels at charged extended defects. The former process is most likely linked to clean dislocations, whereas the latter may originate either from charged dislocations or grain boundaries. The consideration of both kinds of processes is necessary for an accurate description of the device behaviors of poly-Si on glass solar cells over a wide range of dopant densities. The effects of varying the impurity and dislocation densities are also briefly discussed.