CRUCIBLE, PRODUCTION METHOD OF POLYCRYSTALLINE SILICON INGOT, POLYCRYSTALLINE SILICON INGOT, POLYCRYSTALLINE SILICON WAFER, POLYCRYSTALLINE SILICON SOLAR CELL, AND POLYCRYSTALLINE SOLAR CELL MODULE

摘要

PROBLEM TO BE SOLVED: To inexpensively produce a high-quality polycrystalline silicon ingot by suppressing generation of cracks in the ingot and crystal defects when a heater is laterally disposed.;SOLUTION: A crucible is provided for producing a polycrystalline silicon ingot by solidifying molten silicon inside, the silicon which has been molten by heating with a laterally disposed heater. In the bottom of the crucible, a center part 21 is thicker than a peripheral side part 22.;COPYRIGHT: (C)2013,JPO&INPIT