A facile method for preparation of ultralow dielectric constant polymer films

摘要

Recently, considerable attention has been directed to the development of low dielectric constant materials for use in the microelectronics industry (see, for example, papers presented in the Polymers for Micro- and Nano-Electronics Symposium held at the Fall 2002 PMSE meeting in Boston). one approach to the objective is through the incorporation of porosity into films. Control over the pore size, shape, and the distribution in the micro or nanometer scale is critical to obtain films with suitable mechanical and electrical properties. Most of the known porous low-k methods involve either a blending approach, which utilize a blend of a curable resin with a sacrificial porogen or a phase separation approach, which takes advantage of the phase separation of block copolymers which results in the formation of spherical domains of the minor component at certain composition under appropriate conditions. The micro- or nanophase separated block copolymer films can then be carefully heated to induce degradation of the thermally labile blocks, which leave pores behind.