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Magnesium plasma diagnostics by heated probe and characterization of the Mg thin films deposited by thermionic vacuum arc technology

机译:通过加热探针对镁等离子体进行诊断,并表征通过热电子真空电弧技术沉积的Mg薄膜

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The aim of this paper is to report on magnesium plasma diagnostics and to investigate the properties of thin Mg films deposited on Si and glass substrates by using thermionic vacuum arc (TVA) technology. TVA is an original deposition method using a combination of anodic arc and powerful electron gun system (up to 600 W) for the growth of thin films from solid precursors under a vacuum of 10(-6)Torr. Due to the comparatively high deposition rate as well as comparatively high plasma potential-around 0.5 kV-plasma diagnostics were carried out by a heated probe that prevents layer deposition on the probe surface. The estimated value of electron density was in the order of 1.0 x 10(16)m(-3) and the electron temperature varied between 4 x 10(4) and 1.2 x 10(5) K (corresponding to two different discharge conditions). The thin Mg films were investigated using SEM images and TEM analyses provided with HR-TEM and SAED facilities. According to the SAED patterns the structure of the films can be indexed as two forms: hexagonal structure for Mg and cubic structure for MgO; the peak value of grain size distribution was 91.29 nm in diameter for Mg TVA/Si and 61.06 nm for Mg TVA/Gl.
机译:本文的目的是报告镁等离子体的诊断方法,并研究使用热离子真空电弧(TVA)技术沉积在Si和玻璃基板上的Mg薄膜的特性。 TVA是一种原始沉积方法,结合了阳极电弧和强大的电子枪系统(高达600 W),可在10(-6)Torr的真空下从固体前体中生长薄膜。由于较高的沉积速率和较高的等离子体电势,因此通过加热的探针进行了大约0.5 kV的等离子体诊断,以防止层沉积在探针表面。电子密度的估计值约为1.0 x 10(16)m(-3),电子温度在4 x 10(4)和1.2 x 10(5)K之间变化(对应于两个不同的放电条件) 。使用SEM图像和HR-TEM和SAED设备提供的TEM分析研究了镁薄膜。根据SAED图案,可以将膜的结构分为两种形式:Mg为六方结构,MgO为立方结构; MgO为立方结构。 Mg TVA / Si的粒径分布的峰值直径为91.29nm,MgTVA / Gl的粒径分布的峰值为61.06nm。

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