Optical emission spectroscopy of electron cyclotron resonance plasma enchanced metalorganic chemical vapor deposition process for deposition of GaN film

摘要

An investigation was made into the nitrogen-trimethylgallium mixed electron cyclotron resonance (ECR) plasma by optical emission spectroscopy (OES). The ECR plasma enhanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on an alpha-Al2O3 substrate. X-ray diffraction (XRD) analyses showed that the peak of GaN (0002) was at 2 theta. = 34.48 degrees, being sharper and more intense with the increase in the N-2: trimethylgallium(TMG). ow ratio. The results demonstrate that the electron cyclotron resonance-plasma enchanced metalorganic chemical vapor deposition (ECR-MOPECVD) technology is evidently advantageous for the deposition of GaN film at a low growth temperature.