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Specific Features of the Optical and Electrical Properties of Polycrystalline CdTe Films Grown by the Thermal Evaporation Method

机译:热蒸发法生长的多晶CdTe薄膜光学和电学性质的特殊特征

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The results of studying the physical properties of thin CdTe films obtained by the thermal evaporation method have been presented. The optical constants and the band gap of the films under study have been determined (E_g = 1.46 eV). It has been established based on the investigation of optical properties and the Raman spectrum of the films that they possess high structural quality. The activation energy of the electrical conductivity of CdTe films has been determined: E_a = 0.039 eV. The measured spectral dependences of the impedance of CdTe thin films are characteristic of the inhomogeneous medium with two time constants: τ_(gb) = R_(gb)C_(gb) = 1/ω_(gb) = 1.62 × 10~(–3) s and τ_g = R_gC_g = 1/ω_g = 9.1 × 10~(–7) s for grain boundaries and grains, respectively.
机译:提出了研究通过热蒸发法获得的CdTe薄膜的物理性能的结果。已确定研究薄膜的光学常数和带隙(E_g = 1.46 eV)。基于对薄膜的光学性质和拉曼光谱的研究,已经确定它们具有高结构质量。 CdTe薄膜的电导率的活化能已确定:E_a = 0.039 eV。 CdTe薄膜阻抗的频谱相关性是具有两个时间常数的非均匀介质的特征:τ_(gb)= R_(gb)C_(gb)= 1 /ω_(gb)= 1.62×10〜(–3 )s和τ_g= R_gC_g = 1 /ω_g= 9.1×10〜(–7)s分别对应于晶界和晶粒。

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