MAGNETOLUMINESCENCE STUDY OF N-TYPE MODULATION-DOPED ZNSE/ZNXCD1-XSE QUANTUM-WELL STRUCTURES

摘要

We have studied the band-edge photoluminescence from two n-type modulation-doped ZnSe/ZnxCd1-xSe single quantum-well structures with electron areal densities of 1.1 x 10(12) and 1.9 x 10(12) cm(-2) in magnetic fields up to 30 T. The sharp excitonic transitions observed in undoped samples are replaced by a broad luminescence band. In a magnetic field, the luminescence spectra consist of distinct features associated with interband transitions between electrons occupying the conduction-band Landau levels and photoexcited holes. The energies of these transitions exhibit anomalies for even filling factors due to many-body effects. [References: 14]