Characterization of Quantum-Well and Modulation-Doped Heterostructures UsingPhotothermal Deflection Spectroscopy

摘要

Photothermal deflection spectroscopy has been applied to GaAs samples with theultimate goal of measuring the optoelectronic and thermal transport properties of GaAs based multiple quantum wells by this technique. Theoretical models have been developed as well as experimental. investigations have been carried out. Both pulsed as well as cw (modulated) excitations have been considered. Support derived from this grant will enable two U.S. citizen graduate students to obtain Ph.D. degrees in 1998.