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ANHARMONIC INTERACTIONS IN BONDS BETWEEN IMPURITIES AND HOST ATOMS IN GAAS-C AND GAAS-B

机译:GAAS-C和GAAS-B中杂质与氢原子之间键的无价相互作用

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It is demonstrated in GaAs:C and GaAs:B that shifts in frequency of local modes due to impurity isotopes and the associated fine structures arising from isotopes in the host crystal can be reproduced satisfactorily by a model that includes anharmonicity in the stretch force constant between the impurity and its nearest neighbors. The required strength of anharmonicity is of the same order as that implied by a simple Lennard-Jones interaction potential. For the C impurity, the model can also be made compatible with some recent measurements of the energy of the T-2-symmetry second excited state of the local-mode oscillator. Energies of other symmetries of the second excited state and of third excited state are predicted. This work is contrasted with the classic study of CaF2:H- by Elliott et al. [Proc. R. Sec. London, Ser. A 289, 1 (1965)]. In particular, we find that the largest contributions to anharmonic shifts are from processes involving band modes: These processes were not included in the analogous calculations for CaF2:H-. [References: 16]
机译:在GaAs:C和GaAs:B中证明了由于杂质同位素引起的局部模频率的偏移,并且可以通过一个模型来令人满意地重现基质晶体中由同位素引起的相关精细结构,该模型包括杂质及其最近的邻居。非谐性所需的强度与简单的Lennard-Jones相互作用势所隐含的强度相同。对于C杂质,还可以使模型与局部模式振荡器的T-2对称第二激发态能量的一些最新测量值兼容。预测了第二激发态和第三激发态的其他对称性的能量。这项工作与Elliott等人对CaF2:H-的经典研究进行了对比。 [过程R.秒伦敦,序列A 289,1(1965)]。特别是,我们发现对非谐位移的最大贡献来自涉及带模的过程:这些过程未包括在CaF2:H-的类似计算中。 [参考:16]

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