Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions

摘要

Chemical bonding states of doped impurities such as B, As, P and Sb in Si were analyzed by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation, and to clarify depth profiles of concentration of activated and deactivated impurities in shallow junctions. The study of B doped layer revealed that one chemical bonding state is assined to activated B and the other two states are correlated with deactivated B, which probably form B clusters. On the other hand, two different chemical bonding states were detected for each donor type impurity (As, P and Sb), however, these two states could not be necessarily correlated with the electrically activated and deactivated atoms.