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首页> 外文期刊>IEEE transactions on very large scale integration (VLSI) systems >Variation-Aware Delay Fault Testing for Carbon-Nanotube FET Circuits
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Variation-Aware Delay Fault Testing for Carbon-Nanotube FET Circuits

机译:碳纳米管FET电路的变形感知延迟故障测试

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Sensitivity to process variations and manufacturing defects are major showstoppers for the high-volume manufacturing of carbon nanotube field-effect transistors (CNFETs). These imperfections affect gate delay and may remain undetected when test patterns obtained using conventional test-generation techniques are used. We propose a new test generation method that takes CNFET-specific process variations into account and identifies multiple testable long paths through each node in a netlist. In contrast to state-of-the-art techniques, our method can also handle variations that have a nonlinear impact on the propagation delay. The generated test patterns ensure the detection of delay faults through the longest path, even under random CNFET process variations. The proposed method shows significant improvement in the statistical delay quality level (SDQL) compared with a state-of-the-art technique and a commercial ATPG tool for multiple benchmarks. We observed a minimum of 17.1% improvement in the SDQL offered by our patterns over a test set of the same size generated by the commercial tool. We also show that our method, when integrated with the conventional transition fault test flow, offers a significant improvement in the quality of test patterns under random variations. Moreover, the proposed method is flexible and can be easily extended to other emerging device technologies.
机译:处理变化和制造缺陷的敏感性是碳纳米管场效应晶体管(CNFET)的大批量生产的主要展示者。这些缺陷会影响门延迟,并且当使用使用传统测试技术获得的测试模式时,可以保持未检测到。我们提出了一种新的测试生成方法,它考虑了CNFET特定的流程变化,并通过网列中的每个节点识别多个可测试的长路径。与最先进的技术相比,我们的方法还可以处理对传播延迟具有非线性影响的变化。生成的测试模式确保了通过最长路径检测延迟故障,即使在随机的CNFET过程变化下也是如此。该方法显示出与多个基准的技术和商业ATPG工具相比,统计延迟质量水平(SDQL)的显着改善。我们在由商业工具生成的相同大小的测试集中,我们的模式提供了至少17.1%的改进。我们还表明,当与传统的过渡故障测试流集成时,我们的方法在随机变化下提供了测试模式的质量的显着提高。此外,所提出的方法是灵活的,并且可以很容易地扩展到其他新兴设备技术。

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