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Design of a 32 b monolithic microprocessor based on GaAs HMESFET technology

机译:基于GaAs HMESFET技术的32 b单片机的设计

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This paper examines the design of a 32-b GaAs Fast RISC microprocessor (F-RISC/I). F-RISC/I is a single chip GaAs Heterojunction MESFET (HMESFET) processor targeted for implementation on a multichip module (MCM) together with cache memories. The CPU architecture, circuit design. Implementation, and testing are optimized for a seven-stage instruction pipeline implemented with GaAs super-buffered FET logic (SBFL). We have been able to verify novel GaAs SBFL standard cells and compare measured CPU performance with performance estimates based on circuit and device models. The prototype 32-b microprocessor has been implemented using an automated standard cell approach because of time constraints and fabricated using an experimental process by Rockwell International. The CPU chip integrates 92340 transistors on a 7/spl times/7 mm/sup 2/ die and dissipates 6.13 W at 180 MHz. Test results from a prototype fabrication run have demonstrated the operation of the ALU, the program counter, and the register file with delays below 6, 5, and 3.4 ns, respectively. The successful modeling and verification indicate that a 0.5 /spl mu/m HMESFET implementation of F-RISC/I could achieve a peak performance of 350 MHz. The wiring delays account for 42% of the critical path delay.
机译:本文研究了32位GaAs快速RISC微处理器(F-RISC / I)的设计。 F-RISC / I是单芯片GaAs异质结MESFET(HMESFET)处理器,旨在与高速缓存一起在多芯片模块(MCM)上实现。 CPU架构,电路设计。实施和测试针对使用GaAs超缓冲FET逻辑(SBFL)实施的七级指令流水线进行了优化。我们已经能够验证新颖的GaAs SBFL标准单元,并将测得的CPU性能与基于电路和器件模型的性能估计值进行比较。由于时间限制,原型32-b微处理器已使用自动化标准单元方法实现,并使用罗克韦尔国际公司的实验过程进行制造。该CPU芯片在7 / spl次/ 7 mm / sup 2 /管芯上集成了92340个晶体管,并在180 MHz时耗散6.13W。原型制造运行的测试结果证明了ALU,程序计数器和寄存器文件的运行时延分别低于6、5和3.4 ns。成功的建模和验证表明,F-RISC / I的0.5 / spl mu / m HMESFET实现可以实现350 MHz的峰值性能。布线延迟占关键路径延迟的42%。

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