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An Over-1-Gb/s Transceiver Core for Integration Into Large System-on-Chips for Consumer Electronics

机译:用于集成到消费电子产品大型系统级芯片中的1Gb / s以上收发器内核

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This paper describes an area-effective 1.5-Gb/s transceiver core with spread spectrum clocking (SSC) capability that is suitable for integration into large system-on-chips (SoCs) for consumer electronics applications such as audio and video stream data transmission. To achieve a good balance between SSC performance and the core area, a novel SSC scheme using a multi-level (hierarchical) phase-interpolator technique has been developed. This technique achieves a very fine clock phase shift of about 0.1 ps for precise and smooth frequency modulation. The SSC scheme is based on a digital feed-forward operation and leads to a small area and good noise robustness for SoC integration. This core also has digital clock data recovery (CDR) with jitter tolerance enhancement and a simple adaptive data equalizer (AEQ). These functions are also on a digital operation and controlled by digital codes, and the core presupposes a multiphase clock for the digital SSC, CDR, and AEQ with shared phase-locked loop (PLL) topology. A test chip including two of these cores was fabricated using shared PLL. The core showed significant peak power reduction ($-$19 dB to the non-SSC situation) and a small core area of 0.25 mm $^{2}$ in 0.13- $mu$m CMOS process. This core achieved a remarkable ratio of peak power reduction to area of 76 dB/mm $^{2}$. Moreover, it achieved good jitter tolerance (flat 0.8 UI at $> $1 MHz) and stable data communication over an STP (shielded twist pair) cable ranging in length from 1 m to over 22 m.
机译:本文介绍了一种具有扩频时钟(SSC)功能的区域有效的1.5 Gb / s收发器内核,适用于集成到消费电子应用(如音频和视频流数据传输)的大型片上系统(SoC)中。为了在SSC性能和核心区域之间取得良好的平衡,已开发出一种使用多级(分层)相位插值器技术的新颖SSC方案。此技术可实现约0.1 ps的非常精细的时钟相移,以实现精确和平滑的频率调制。 SSC方案基于数字前馈操作,可为SoC集成提供较小的面积和良好的噪声鲁棒性。该内核还具有增强了抖动容限的数字时钟数据恢复(CDR)和简单的自适应数据均衡器(AEQ)。这些功能也是数字操作的,并由数字代码控制,内核预先为具有共享锁相环(PLL)拓扑的数字SSC,CDR和AEQ提供了多相时钟。使用共享的PLL制造了包括其中两个内核的测试芯片。核心显示出明显的峰值功率降低(在非SSC情况下为$-$ 19 dB),在0.13-μmCMOS工艺中核心面积仅为0.25 mm $ {{2} $]。该磁芯的峰值功率降低与76 dB / mm 2的面积之比显着提高。此外,它还具有良好的抖动容限(在$> $ 1 MHz时平坦的0.8 UI),并通过长度在1 m至22 m以上的STP(屏蔽双绞线)电缆实现了稳定的数据通信。

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