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A 32-Gb/s On-Chip Bus With Driver Pre-Emphasis Signaling

机译:具有驱动器预加重信号的32 Gb / s片上总线

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This paper describes a differential current-mode bus architecture based on driver pre-emphasis for on-chip global interconnects that achieves high-data rates while reducing bus power dissipation and improving signal delay latency. The 16-b bus core fabricated in 0.25- $mu$m complementary metal–oxide–semiconductor (CMOS) technology attains an aggregate signaling data rate of 32 Gb/s over 5–10-mm-long lossy interconnects. With a supply of 2.5 V, 25.5–48.7-mW power dissipation was measured for signal activity above 0.1, equivalent to 0.80–1.52 pJ/b. This work demonstrates a 15.0%–67.5% power reduction over a conventional single-ended voltage-mode static bus while reducing delay latency by 28.3% and peak current by 70%. The proposed bus architecture is robust against crosstalk noise and occupies comparable routing area to a reference static bus design.
机译:本文介绍了一种基于驱动器预加重的片上全局互连差分电流模式总线架构,该架构可实现高数据速率,同时降低总线功耗并改善信号延迟等待时间。采用0.25-μm互补金属氧化物半导体(CMOS)技术制造的16-b总线核心在5-10mm长的有损互连上实现了总计32 Gb / s的信令数据速率。在电源为2.5 V的情况下,测得信号活动大于0.1时的功耗为25.5-48.7 mW,相当于0.80-1.52 pJ / b。这项工作表明,与传统的单端电压模式静态总线相比,功率降低了15.0%至67.5%,同时将延迟延迟降低了28.3%,并将峰值电流降低了70%。所提出的总线架构对串扰噪声具有鲁棒性,并且占用的布线面积可与参考静态总线设计相比。

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