首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >Analysis and Techniques for Mitigating Interference From Power/Signal Lines and to SRAM Circuits in CMOS Inductive-Coupling Link for Low-Power 3-D System Integration
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Analysis and Techniques for Mitigating Interference From Power/Signal Lines and to SRAM Circuits in CMOS Inductive-Coupling Link for Low-Power 3-D System Integration

机译:用于低功耗3D系统集成的CMOS电感耦合链路中缓解电源/信号线和SRAM电路干扰的分析和技术

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This paper discusses analysis and techniques for mitigating interference of an inductive-coupling inter-chip link. Electromagnetic interference from power/signal lines and to SRAM circuits was simulated and measured. In order to verify the interference, test chips were designed and fabricated using 65-nm CMOS technology. The measurement results revealed that: 1) interference from power lines depends on the shape of the power lines; 2) interference from signal lines can be canceled by increasing transmitter power by only 9%; and 3) interference with SRAM circuits is less important than other issues under ordinary conditions. Based on the measurement results, interference mitigation techniques are proposed and investigated.
机译:本文讨论了减轻电感耦合芯片间链路干扰的分析方法和技术。模拟和测量了从电源/信号线到SRAM电路的电磁干扰。为了验证干扰,使用65纳米CMOS技术设计和制造了测试芯片。测量结果表明:1)电源线的干扰取决于电源线的形状; 2)通过仅增加9%的发射功率就可以消除来自信号线的干扰; 3)在正常条件下,对SRAM电路的干扰没有其他问题那么重要。基于测量结果,提出并研究了干扰缓解技术。

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