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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >3-D System Integration of Processor and Multi-Stacked SRAMs Using Inductive-Coupling Link
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3-D System Integration of Processor and Multi-Stacked SRAMs Using Inductive-Coupling Link

机译:使用电感耦合链路的处理器和多层SRAM的3D系统集成

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This paper describes a three-dimensional (3-D) system integration of a full-fledged processor chip and two memory chips using inductive coupling. To attain a 3-D communication link with a smaller area and lower power-consumption, shortening the link distance and preventing signal degradation due to unused inductors are important challenges. Therefore, we developed a new 3D-integrated wire-penetrated multi-layer structure for a shorter link distance and an open-skipped-inductor scheme for suppressing signal degradation. In addition, to avoid undefined-value propagation in stacking multi-memories using an inductive-coupling link, we proposed a memory-access-control scheme with a pinpoint-data-capture scheme. We demonstrate that three fabricated chips can be successfully AC-coupled using inductive coupling. The power and area efficiency of the link are 1$~$pJ/b and ${hbox {0.15~mm}}^{2} /hbox{Gbps}$ , respectively, which are the same as those of two-chip integration.
机译:本文介绍了使用感应耦合的成熟处理器芯片和两个内存芯片的三维(3-D)系统集成。为了获得面积更小,功耗更低的3D通信链路,缩短链路距离并防止由于未使用的电感器引起的信号劣化是重要的挑战。因此,我们开发了一种新的3D集成线穿透多层结构,以缩短链接距离,并开发了一种开放式电感器方案来抑制信号劣化。此外,为避免在使用感应耦合链接的多存储器堆栈中进行未定义值传播,我们提出了一种具有精确数据捕获方案的内存访问控制方案。我们证明了使用电感耦合可以成功地将三个装配好的芯片进行交流耦合。链路的功率和面积效率分别为1 $〜$ pJ / b和$ {hbox {0.15〜mm}} ^ {2} / hbox {Gbps} $,与两芯片集成相同。

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