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A Sub-1 V Transient-Enhanced Output-Capacitorless LDO Regulator With Push–Pull Composite Power Transistor

机译:具有推挽复合功率晶体管的1V以下瞬态增强型无输出电容器LDO稳压器

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摘要

An output-capacitorless low-dropout (OCL-LDO) regulator with a push–pull composite power transistor is presented in this paper. Using the proposed composite transistor, the nondominant parasitic poles can be pushed to higher frequencies, leading to good stability. In addition, the slew rate limitation at the gate of the power transistor is improved greatly by the proposed push–pull structure. Implemented and fabricated in UMC 65-nm CMOS technology, the LDO regulator occupies only an active area of 0.0096 . The experimental results have shown that the regulator is able to operate at and deliver a maximum load current of 50 mA with a dropout voltage of less than 250 mV. It consumes a quiescent current of 16.2 and is able to settle within 1.2 .
机译:本文提出了一种具有推挽复合功率晶体管的无输出电容器低压降(OCL-LDO)稳压器。使用建议的复合晶体管,可以将非主要寄生极推至更高的频率,从而获得良好的稳定性。另外,所提出的推挽结构大大改善了功率晶体管栅极的摆率限制。 LDO稳压器采用UMC 65纳米CMOS技术实现和制造,仅占据0.0096的有效面积。实验结果表明,该稳压器能够在50 mA的最大负载电流下工作,并提供低于250 mV的压差。它消耗的静态电流为16.2,并且能够在1.2之内稳定下来。

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