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Exploration of Low-Power High-SFDR Current-Steering D/A Converter Design Using Steep-Slope Heterojunction Tunnel FETs

机译:使用陡坡异质结隧道FET的低功耗高SFDR电流控制D / A转换器设计的探索

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Steep-slope heterojunction tunnel field-effect transistor (HTFET) devices promise new opportunities beyond CMOS in low-power high-performance communication applications. In this paper, the circuit design optimization of a low-power 14-bit 1-GS/s current-steering digital-to-analog converter (DAC) using 0.4/0.3 V mixed-supply HTFETs is explored. Based on the device characteristics comparison and circuit analysis, it is shown in this paper that HTFET endorses significant differences in both I -V and C -V due to the steep-slope tunneling mechanism and a nature of vertically fabricated structure. While such differences significantly affect the circuit design corners, this paper gives the device-circuit co-optimization for the HTFET DAC, reaching at higher current source output impedance, less nonlinear switching glitch distortions, and thus superior spectral performance over the Si-CMOS DAC. HTFET device variation is also discussed, and calibration techniques are adopted for the static matching accuracy.
机译:陡坡异质结隧道场效应晶体管(HTFET)器件为低功耗高性能通信应用提供了CMOS以外的新机遇。本文探讨了使用0.4 / 0.3 V混合电源HTFET的低功耗14位1-GS / s电流控制数模转换器(DAC)的电路设计优化。基于器件特性的比较和电路分析,本文表明,由于陡坡隧穿机制和垂直制造结构的特性,HTFET认可了I-V和C-V的显着差异。虽然这些差异会显着影响电路设计的各个角落,但本文还是针对HTFET DAC进行了器件-电路的共同优化,以达到更高的电流源输出阻抗,更少的非线性开关毛刺失真,从而提供了优于Si-CMOS DAC的频谱性能。 。还讨论了HTFET器件的变化,并采用校准技术来保证静态匹配精度。

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