Logic-in-Memory With a Nonvolatile Programmable Metallization Cell

摘要

This paper introduces two new cells for logic-in-memory (LiM) operation. The first novelty of these cells is the resistive random access memory configuration that utilizes a programmable metallization cell as nonvolatile element. CMOS transistors and ambipolar transistors are used as processing and control elements for the logic operations of the LiM cells. The first cell employs ambipolar transistors and CMOS in its logic circuit (7T2A1P), while the second LiM cell uses only MOSFETs (9T1P) to implement logic functions, such as AND, OR, and XOR. The operational mode of the proposed cells is voltage-based, which is much different from the previous designs in which a LiM cell operates on a current mode. Extensive simulation results using HSPICE are provided for the evaluation of these cells; comparison shows that the proposed two cells outperform previous LiM cells in metrics, such as logic operation delays, power delay product, circuit complexity, write time, and output swing.