Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells

摘要

Disclosed is an array of nonvolatile memory cells includes five memory cells per unit cell. Also disclosed is an array of vertically stacked tiers of nonvolatile memory cells that includes five memory cells occupying a continuous horizontal area of 4F² within an individual of the tiers. Also disclosed is an array of nonvolatile memory cells comprising a plurality of unit cells which individually comprise three elevational regions of programmable material, the three elevational regions comprising the programmable material of at least three different memory cells of the unit cell. Also disclosed is an array of vertically stacked tiers of nonvolatile memory cells that includes a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells. Other embodiments and aspects are disclosed.