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Embedded DRAM-Based Memory Customization for Low-Cost FFT Processor Design

机译:基于嵌入式DRAM的存储器定制,可实现低成本FFT处理器设计

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In this paper, we present embedded dynamic random access memory (eDRAM)-based memory customization techniques for low-cost fast Fourier transform (FFT) processor design. The main idea is based on the observation that the FFT processor has regular and predictable memory access patterns, and it can be efficiently exploited for memory customization using eDRAM. The memory customization approaches are applied to both of the pipelined and memory-based FFT architectures. In the pipelined architecture, the read wordline (RWL) coupling write assist and data packing schemes are employed to reduce the redundant RWL and wordline driving, respectively, in columninterleaved memory arrays. The memory address decoder is also simplified with thermometer code by exploiting the sequential access patterns. For the memory-based architecture, the modified cached-memory structure is employed in addition to the techniques used in the pipelined FFT architecture. The hardware implementation results of 2k-point FFT with a 0.11-um CMOS technology show that the proposed eDRAM-based pipelined and cached-memory FFTs achieve 26.8% and 33.2% power savings over the static RAM-based FFT design, respectively.
机译:在本文中,我们提出了基于嵌入式动态随机存取存储器(eDRAM)的存储器定制技术,用于低成本快速傅里叶变换(FFT)处理器设计。主要思想基于以下观察结果:FFT处理器具有规则且可预测的内存访问模式,可以使用eDRAM有效地利用它来进行内存定制。存储器定制方法同时应用于流水线和基于存储器的FFT体系结构。在流水线架构中,采用读字线(RWL)耦合写辅助和数据打包方案来分别减少列交错存储阵列中的冗余RWL和字线驱动。通过利用顺序访问模式,还可通过温度计代码简化内存地址解码器。对于基于内存的体系结构,除了在流水线FFT体系结构中使用的技术之外,还采用了改进的缓存结构。采用0.11um CMOS技术的2k点FFT的硬件实现结果表明,与基于静态RAM的FFT设计相比,基于eDRAM的流水线和缓存内存FFT分别节省了26.8%和33.2%的功耗。

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