Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology

摘要

In this paper, a novel radiation-hardened-by-design (RHBD) 12T memory cell is proposed to tolerate single node upset and multiple-node upset based on upset physical mechanism behind soft errors together with reasonable layout-topology. The verification results obtained confirm that the proposed 12T cell can provide a good radiation robustness. Compared with 13T cell, the increased area, power, read/write access time overheads of the proposed 12T cell are -18.9%, -23.8%, and 171.6%/-50.0%, respectively. Moreover, its hold static noise margin is 986.2 mV which is higher than that of 13T cell. This means that the proposed 12T cell also has higher stability when it provides fault tolerance capability.