机译:使用自参考差分写终止技术降低STT-RAM能量
Department of Electrical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Iran;
Department of Engineering, Integrated Circuits and Electronics Laboratory, Aarhus University, Aarhus, Denmark;
Department of Engineering, Ferdowsi University of Mashhad, Mashhad, Iran;
Department of Engineering, Integrated Circuits and Electronics Laboratory, Aarhus University, Aarhus, Denmark;
Department of Engineering, Integrated Circuits and Electronics Laboratory, Aarhus University, Aarhus, Denmark;
Switches; Magnetic tunneling; Magnetization; Transistors; Mathematical model; Writing; Random access memory;
机译:用于STT-RAM的STT-RAM写入能量减少的自我引用的单端电阻监测写入终止方案
机译:基于反馈学习的节能STT-RAM缓存的空写终止
机译:基于反馈学习的Dead写入终止节能STT-RAM缓存
机译:通过差分写终止方法降低STT-RAM写能耗
机译:用于可靠的STT-RAM设计的错误表征和纠正技术。
机译:解释了单能量迭代金属人工制品减少技术和其他金属人工制品减少技术的矫形和非骨科应用
机译:使用早期写终止减少STT-RAM的能量