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Sense Amplifier Half-Buffer (SAHB) A Low-Power High-Performance Asynchronous Logic QDI Cell Template

机译:感应放大器半缓冲(SAHB)低功耗高性能异步逻辑QDI单元模板

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We propose a novel asynchronous logic (async) quasi-delay-insensitive (QDI) sense-amplifier half-buffer (SAHB) cell design approach, with emphases on high operational robustness, high speed, and low power dissipation. There are five key features of our proposed SAHB. First, the SAHB cell embodies the async QDI 4-phase (4φ) signaling protocol to accommodate process-voltage-temperature variations. Second, the sense amplifier (SA) block in SAHB cells embodies a cross-coupled latch with a positive feedback mechanism to speed up the output evaluation. Third, the evaluation block in the SAHB comprises both nMOS pull-up and pull-down networks with minimum transistor sizing to reduce the parasitic capacitance. Fourth, both the evaluation block and SA block are tightly coupled to reduce redundant internal switching nodes. Fifth, the SAHB cell is designed in CMOS static logic and hence appropriate for full-range dynamic voltage scaling operation for VDD ranging from nominal voltage (1 V) to subthreshold voltage (~0.3 V). When six library cells embodying our proposed SAHB are compared with those embodying the conventional async QDI precharged half-buffer (PCHB) approach, the proposed SAHB cells collectively feature simultaneous -.64% lower power, -.21% faster, and ~6% smaller IC area; the PCHB cell is inappropriate for subthreshold operation. A prototype 64-bit Kogge-Stone pipeline adder based on the SAHB approach (at 65 nm CMOS) is designed. For a 1-GHz throughput and at nominal VDD, the design based on the SAHB approach simultaneously features -.56% lower energy and -.24% lower transistor count advantages than its PCHB counterpart. When benchmarked against the ubiquitous synchronous logic counterpart, our SAHB dissipates -.39% lower energy at the 1-GHz throughput.
机译:我们提出了一种新颖的异步逻辑(async)准延迟不敏感(QDI)灵敏放大器半缓冲(SAHB)单元设计方法,重点是高操作鲁棒性,高速和低功耗。我们提议的SAHB具有五个关键特征。首先,SAHB单元体现了异步QDI 4相(4φ)信令协议,以适应过程电压-温度变化。其次,SAHB单元中的读出放大器(SA)模块体现了具有正反馈机制的交叉耦合锁存器,可加快输出评估速度。第三,SAHB中的评估模块包括nMOS上拉网络和下拉网络,并具有最小的晶体管尺寸以减小寄生电容。第四,评估模块和SA模块紧密耦合,以减少冗余的内部交换节点。第五,SAHB单元采用CMOS静态逻辑设计,因此适用于VDD从标称电压(1 V)至亚阈值电压(〜0.3 V)的全范围动态电压缩放操作。当将体现我们提出的SAHB的六个库单元与体现传统的异步QDI预充电半缓冲(PCHB)方法的库单元进行比较时,提出的SAHB单元共同具有同时降低-.64%,更快-.21%和〜6%的功能。 IC面积更小; PCHB单元不适用于亚阈值操作。设计了基于SAHB方法的原型64位Kogge-Stone管道加法器(在65 nm CMOS上)。对于1 GHz的吞吐量和标称VDD,基于SAHB方法的设计同时具有比PCHB同类产品低-.56%的能耗和-.24%的晶体管数量的优势。以无处不在的同步逻辑基准为基准,我们的SAHB在1 GHz吞吐量下的能耗降低了-.39%。

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