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Efficient Designs of Multiported Memory on FPGA

机译:FPGA上多端口存储器的高效设计

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摘要

The utilization of block RAMs (BRAMs) is a critical performance factor for multiported memory designs on field-programmable gate arrays (FPGAs). Not only does the excessive demand on BRAMs block the usage of BRAMs from other parts of a design, but the complex routing between BRAMs and logic also limits the operating frequency. This paper first introduces a brand new perspective and a more efficient way of using a conventional two reads one write (2R1W) memory as a 2R1W/4R memory. By exploiting the 2R1W/4R as the building block, this paper introduces a hierarchical design of 4R1W memory that requires 25% fewer BRAMs than the previous approach of duplicating the 2R1W module. Memories with more read/write ports can be extended from the proposed 2R1W/4R memory and the hierarchical 4R1W memory. Compared with previous xor-based and live value table-based approaches, the proposed designs can, respectively, reduce up to 53% and 69% of BRAM usage for 4R2W memory designs with 8K-depth. For complex multiported designs, the proposed BRAM-efficient approaches can achieve higher clock frequencies by alleviating the complex routing in an FPGA. For 4R3W memory with 8K-depth, the proposed design can save 53% of BRAMs and enhance the operating frequency by 20%.
机译:对于现场可编程门阵列(FPGA)上的多端口内存设计,块RAM(BRAM)的使用是至关重要的性能因素。对BRAM的过度需求不仅阻止了设计其他部分对BRAM的使用,而且BRAM与逻辑之间的复杂布线也限制了工作频率。本文首先介绍了一种全新的观点,以及将常规的两次读取一次写入(2R1W)存储器用作2R1W / 4R存储器的更有效方法。通过利用2R1W / 4R作为构建块,本文介绍了4R1W存储器的分层设计,与以前复制2R1W模块的方法相比,它需要的BRAM减少了25%。可以从建议的2R1W / 4R存储器和分层4R1W存储器扩展具有更多读/写端口的存储器。与以前的基于异或运算法和基于活值表的方法相比,对于具有8K深度的4R2W存储器设计,所提出的设计分别可以减少多达53%和69%的BRAM使用。对于复杂的多端口设计,通过减轻FPGA中的复杂布线,提出的BRAM有效方法可以实现更高的时钟频率。对于深度为8K的4R3W存储器,该设计可以节省53%的BRAM,并将工作频率提高20%。

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