Performance Degradation of Automotive Power MOSFETs Under Repetitive Avalanche Breakdown Test

摘要

Avalanche ruggedness is one of the key factors for safe and reliable power converters deployed in various automotive subsystems. In this article, the avalanche capability of power MOSFETs is tested under different repetitive avalanche conditions to differentiate the die degradation and package degradation. While examining the degradation mechanisms, the corresponding electrical parameter shifts are analyzed to better understand the structural changes and root causes and identify potential precursors for condition monitoring. For this purpose, a high-resolution and cost-effective nanosecond current pulse generator (CPG) is designed. Due to the high-resolution pulsewidth modulation function of a digital signal processor (DSP), short current pulses can be generated in the order of 100 ps where the magnitude and duration of the current pulsewidth can be adjusted precisely. During the experiments, power MOSFETs are stressed under two different pulsewidths. It is observed that the ON-state resistance gradually increases in both cases, yet the roots of the degradations are different. The die degradation and package degradation are responsible for the changes in short pulse and long pulse, respectively. In the short pulse case, some devices show saturation in drain leakage current and ON-state resistance, while some others show a significant threshold voltage drop, which leads to a noticeable shift of transfer and output characteristics. The electrical parameter shifts indicate a possible gate degradation after the device aging. At the end of the tests, failure analyses are conducted on both devices under test (DUTs) under different stress conditions, revealing different failure mechanisms.