Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering

摘要

Pt/Ti bottom electrodes were fabricated on SiO_2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate (PZT) thin films were deposited on Pt/Ti/ SiO_2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited In Ar ambience and rapid-thermal-annealed for 20 min at 700 deg C have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 muC/cm~2 and 13 muC/cm~2 respectively.