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机译:GaN封盖厚度对InN / GaN量子点的应变和光致发光特性的影响
Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan, ROC;
Department of Materials Science and Engineering, National Chiao-Tung University, Hsin-Chu 300, Taiwan, ROC;
Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan, ROC;
Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan, ROC;
InN; metal organic chemical vapor deposition; capping layer; XRD; PL;
机译:GaN间隔层厚度对多堆叠InN / GaN量子点的结构和光致发光性能的影响
机译:GaN盖层对金属有机气相外延生长的GaN(0001)上嵌入的自组织InN量子点的形貌和物理性质的影响
机译:纤锌矿InGaN / GaN量子点中应变和内部场分布的封盖层厚度和量子点高度依赖性
机译:INN Quantum Dots Ina1gan / GaN异质结构的电容 - 电压特性
机译:等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
机译:GaN上InN量子点的应力释放分析
机译:GaN上InN量子点的应力释放分析