通过光致发光方法研究了氮化铟(InN)材料的发光特性。实验发现,随着温度的变化,不同结构的InN样品的发光峰位置展现了不同的行为。在具有In团簇结构的样品中,其发光峰位置显示了反常的蓝移现象。这种发光峰能量的反常变化是由In团簇周围的界面态引起的。%We investigated the optical properties of InN films by photoluminescence. Experiments show that InN with different crystal structure exhibits different photoluminescence peaks at different temperature. The photoluminescence peaks show abnormal blue-shift phenomenon for the InN sample with indium clusters. The phenomenon is caused by the interface state between the InN and Indium clusters.
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