A 320-GHz 1 src='/images/tex/326.gif' alt='times'> 4 Fully Integrated Phased Array Transmitter Using 0.13- src='/images/tex/241.gif' alt='mu'> m SiGe BiCMOS Technology

摘要

This paper presents a 320-GHz 14 fully integrated phased array transmitter using 0.13-m SiGe BiCMOS technology. The 14 array transmitter is aiming for terahertz wireless communication and is based on RF beam forming architecture. By integrating a 20-GHz phase-locked-loop (PLL) frequency synthesizer, an 80-GHz quadrupler, a 1:4 Wilkinson power divider network, four-way 80-GHz tunable attenuators, amplifiers, analog phase shifters, 320-GHz frequency quadruplers/modulators, and on-chip antenna arrays, the transmitter chip achieves a maximal EIRP of 10.6 dBm at 320 GHz with the 3-dB bandwidth of 20 GHz, and beam scanning range is obtained. The dc consumption of the whole chip is 1000 mW and the total chip size is 8 4.3 mm .