Surface etching induced by Ce silicide formation on Si(100)

摘要

We investigate the temperature-dependent surface etching process induced by Ce silicide on Si(100) using scanning tunneling microscopy and X-ray photoelectron spectroscopy. We found that step edges on the Si(100) surface are gradually roughened due to the formation of Ce silicide as a function of substrate temperature. Unlike the Si(111) surface, however, terrace etching also occurs in addition to step roughening at 500 ℃. Moreover, we found that Si(100) dimers are released and formed dimer vacancy lines because bulk diffusion of Ce silicide into Si(100) surface occurs the defect-induced strain at higher temperature (～600 ℃).