Reactions of atomic oxygen with the D-covered Si(100) surfaces

摘要

We have studied D abstraction by O on the D/Si(100) surfaces using a continuous as well as pulsed O-beams. Both D_2 and D_2O molecules are detected during O-exposure. The D_2 desorption is found to take place more efficiently on the monodeuteride/dideuteride surface than on the monodeuteride surface. The pulsed beam experiments exhibit occurrence of both a slow and a fast D_2 desorption. The D_2 desorption is found to obey the second-order rate law in θ_D~0 on the monodeuteride surfaces and 3.5th-order rate law on the monodeuteride/dideuteride surfaces. The D_2O desorption is found to be governed also by the second-order rate law, however regardless of D coverage even on the monodeuteride/dideuteride surfaces. Possible mechanisms for the O-induced desorption from the D/Si(100) surfaces are discussed.