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STM and LEED studies of CaF_2 submonolayer coverage on Si(001)

机译:Si(001)上CaF_2亚单层覆盖的STM和LEED研究

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In the present work we report on the initial stage of CaF_2 growth on Si(001) at 750 ℃. Samples with submonolayer coverage are grown and in situ studied by low energy electron diffraction and scanning tunneling microscopy. The unusual diffraction patterns with asymmetrically split fractional reflections and streaks are ascribed to the antiphase relations at the surface characteristic for the studied CaF_2 coverage. A statistical model built to describe the partially ordered array of 3× cells shows good agreement with the observed diffraction patterns. Similarities between CaF_2/Si(001) and metallic Ca/Si(001) interfaces are discussed.
机译:在目前的工作中,我们报道了CaF_2在750℃Si(001)上生长的初始阶段。生长具有亚单层覆盖的样品,并通过低能电子衍射和扫描隧道显微镜原位研究。具有不对称分裂分数反射和条纹的不寻常衍射图案归因于所研究的CaF_2覆盖范围的表面特征处的反相关系。建立的用于描述3x单元的部分有序阵列的统计模型与观察到的衍射图样显示出良好的一致性。讨论了CaF_2 / Si(001)与金属Ca / Si(001)界面之间的相似性。

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