机译:通过了解初始表面反应,在锗上无界面生长氧化钇
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore;
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore;
Institute of Materials Research and Engineering, A'STAR (Agency for Science, Technology and Research), 3 Research Link, 117602, Singapore;
Institute of Materials Research and Engineering, A'STAR (Agency for Science, Technology and Research), 3 Research Link, 117602, Singapore;
School of Materials Science and Engineering, Nanyang Technological University, Block N4.1, 50 Nanyang Avenue, 639798, Singapore;
Temasek Laboratories, Nanyang Technological University, Block N4.1,50 Nanyang Avenue, 639798, Singapore;
CLOBALFOUNDR1ES Singapore Pte. Ltd, 60 Woodlands Street 2, 738406, Singapore;
yttrium oxide; germanium; interfacial layer; X-ray photoelectron spectroscopy; yttrium; yttrium germanate; yttrium germanide; oxidation;
机译:Si(001)表面上的三甲基铝反应用于初始氧化铝薄膜生长
机译:Si(001)表面上的 Tri em>-甲基铝反应用于初始氧化铝薄膜生长
机译:一种了解和模拟催化剂在反应条件下初始运行过程中性能演变的新方法-以正丁烷选择性氧化钒磷氧化物为例
机译:氧化锆多晶硅锗膜初始生长的特征
机译:钇钡氧化铜薄膜生长初期阶段的微观结构表征:晶格匹配和非晶格匹配生长的比较。
机译:室温条件下稀土氧化物表面的表面化学:与水和烃的反应
机译:三 - 甲基铝对初始氧化铝薄膜生长的Si(001)表面的反应
机译:新生成表面的初始氧化物生长速率