Process for preparing a silicon dioxide layer by high temperature oxidation of a substrate having at least a germanium surface or a silicon-germanium surface

摘要

The procedure for preparing a layer of silicon dioxide by high-temperature oxidation of a substrate with a formula of Si1-xGex, in which x is greater than 0 and less than or equal to 1, consists of the following stages: a) depositing on the substrate surface (12) a supplementary layer (13) of thickness hy and with a general formula of Si1-yGey, where y is greater than 0 and less than x; b) oxidising the supplementary layer at high temperature, typically above 400 degrees C, so that it is transformed wholly or partly into a layer of silicon dioxide (SiO2).