机译:4H-SiC(0001)中Cualo_2 / 4H-SiC异质结构的制造与表征
Department of Electronic Engineering Xi'an University of Technology Xi'an 710048 China Key Laboratory of Wide Bandgap Semiconductor Materials Ministry of Education Xidian University 2 South Taibai Road Xi'an 710071 PR China;
Department of Electronic Engineering Xi'an University of Technology Xi'an 710048 China;
Department of Electronic Engineering Xi'an University of Technology Xi'an 710048 China;
Department of Electronic Engineering Xi'an University of Technology Xi'an 710048 China;
Department of Electronic Engineering Xi'an University of Technology Xi'an 710048 China;
Department of Electronic Engineering Xi'an University of Technology Xi'an 710048 China;
School of Science Xi'an Polytechnic University Xi'an 710048 China;
CuAlO_2; SiC; Thin films; Sol-gel method; Heterostructure;
机译:具有场板和浮动保护环边缘终端结构的Ni / 4H-SiC(0001)肖特基二极管阵列的设计,制造和表征
机译:Re和Nb在4H-SiC(0001)和4H-SiC(0001)上的单层生长模式
机译:在4H-SiC(0001),(1120)和6H-SiC(0001)上的RESURF MOSFET的设计和制造
机译:4H-SiC(1120)和4H-SiC(0001)8°离轴衬底和同质外延膜的表征和比较
机译:高压(> 10 kV)4H-SiC MPS二极管的设计,制造和表征
机译:在离轴4H-SiC上生长的外延石墨烯的纳米级结构表征(0001)
机译:在4H-SiC(0001),(1120)和6H-SiC(0001)上的RESURF MOSFET的设计和制造