机译:通过异位紫外臭氧退火技术提高宽带紫外可见光探测器的响应度和探测率
Department of Electrical Engineering Indian Institute of Technology Bombay Powai Mumbai 400 076 Maharashtra India;
Centre for Research in Nanotechnology & Science Indian Institute of Technology Bombay Powai Mumbai 400 076 India;
Department of Physics National Institute of Technology Durgapur Durgapur 713209 West Bengal India;
Department of Electronics and Communication Engineering Kalyani Government Engineering College Nadia 741235 West Bengal India;
ZnMgO thin films; UV-Vis photodetector; UV-Ozone annealing; Photoconductive gain; Responsivity;
机译:高响应性,高检测率,超快拓扑绝缘体Bi2Se3 /硅异质结构宽带光电探测器
机译:通过晶粒尺寸控制和ALD-AL2O3界面修饰显着增强了CIGS宽带高速光电探测器的探测
机译:具有超高探测的宽带表面等离子体共振增强的自动石墨烯/ GaAS光电探测器
机译:UV-臭氧退火对ZnMGO薄膜UV-VIS光电探测器瞬态特性的影响
机译:硅纳米线光电晶体管:设计,制造和表征高响应度的宽带光电探测器。
机译:基于磁控溅射沉积的可转移WS2膜的高响应紫外可见光探测器
机译:通过晶粒尺寸控制和ALD-AL2O3界面改性显着增强了CIGS宽带高速光电探测器的探测器