Photodetector comprising polysilicon layer having enhanced responsivity and preparation method thereof

摘要

The present invention relates to a photodetector including a polysilicon layer having improved sensitivity through high concentration doping on a polysilicon layer and a method for manufacturing the same. According to the present invention, the high concentration impurity doped in the polycrystalline silicon layer serves to lower the potential barrier formed in the energy band by saturating a number of trap states of grain boundaries that degrade electrical properties, so that the polycrystalline silicon layer doped with high concentration impurities Since the photocurrent generated by the excitation photodetector is hardly affected by the trap of the grain boundary, the sensitivity and external quantum efficiency are improved, and since it is easily deposited, it is possible to manufacture a high-performance photodetector at low cost.