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METHOD OF PRODUCING DOPED POLYSILICON LAYERS AND POLYSILICON LAYERED STRUCTURES AND METHOD OF STRUCTURIZING LAYERS AND LAYERED STRUCTURES WHICH COMPRISE POLYSILICON LAYERS
METHOD OF PRODUCING DOPED POLYSILICON LAYERS AND POLYSILICON LAYERED STRUCTURES AND METHOD OF STRUCTURIZING LAYERS AND LAYERED STRUCTURES WHICH COMPRISE POLYSILICON LAYERS
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机译:制备掺杂的多晶硅层和多晶硅层状结构的方法以及构造包括多晶硅层的层和层状结构的方法
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摘要
In the production of a doped polysilicon layer and of layer structures containing such a layer, in which a doping compound is added to the process gas during CVD, the doping compound addition is terminated after achieving the desired doping and the desired deposition duration so that a boundary layer of undoped silicon layer is deposited. Preferably, the doping compound is a gaseous or volatile compound of B, Ga, In, P, As or Sb, especially diborane, trimethylboron, phosphine or arsine. Also claimed is a method of structuring a layer structure having a metal or metal silicide layer on a polysilicon layer by a three stage etching process using a fluorine-containing gas (preferably NF3, SiF4, SF6 and/or fluorinated hydrocarbon) in the first stage, a chlorine-containing gas (preferably HCl, Cl2 and/or BCl3) in the second stage and a bromine-containing gas (preferably HBr) in the third stage. Further claimed is a wafer or semiconductor chip produced using one or both of the above processes.
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