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Method of producing doped polysilicon layers and polysilicon layered structrues and method of structuring layers and layered structures which comprise polysilicon layers
Method of producing doped polysilicon layers and polysilicon layered structrues and method of structuring layers and layered structures which comprise polysilicon layers
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机译:制备掺杂的多晶硅层和多晶硅层结构的方法以及构造包括多晶硅层的层和层状结构的方法
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摘要
Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping profile. The feed of dopant to the process gas is stopped toward the end of the vapor deposition, with the result that a boundary layer of undoped silicon is deposited. As a result, a favorable surface quality and better adhesion to a neighboring layer is obtained. The structuring process comprises an at least three-step etching process in which a fluorine containing gas is used for etching in a first step, a chlorine-containing gas is used for etching in a second step and a bromine-containing gas is used for etching in a third step. The invention also encompasses wafers and semiconductor chips produced with the novel doping and/or structuring method.
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