New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor

摘要

An accurate two dimensional subthreshold modeling of Germanium based Dual Halo Gate stacked Triple Material Surrounding Gate (Ge-DH-GS-TM-SG) tunnel field effect transistor is proposed for the first time in this paper. The model is solved by Poisson's equation using parabolic approximation method. The developed model gives analytical expressions for surface potential, electric field, threshold voltage, drain current, trans conductance to drain current ratio, subthreshold current and subthreshold swing are used to evaluate the short channel effects. The subthreshold swing of the proposed Ge-DH-GS-TM-SG-TFET is compared with Silicon based Single Halo Triple Material Surrounding gate TFET(Si-SH-TM-SG-TFET)and Triple Material Surrounding Gate TFET (TM-SG TFET). It is noticable that the proposed device Ge-DH-GS-TM-SG-TFET structure provides. poor outflow current I_(OFF) (10~(-15)A/μm), and remarkable improvement in ON current. (10~(-5)A/μm).Moreover, the I_(ON)/I_(OFF) ratio is 10~8. The developed model results are validated through comparison with 3-D sentaurus TCAD simulator results.