机译:新型AlGaN / GaN混合阳极电流调节二极管(CRD),具有逐步分级的肖特基欧姆阴极
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
机译:具有氟化物等离子体处理的AlGaN / GaN肖特基欧姆组合阳极场效应二极管
机译:具有氟化物等离子体处理的AlGaN / GaN肖特基欧姆组合阳极场效应二极管
机译:在硅上具有三个含铝的渐变AlGaN缓冲层,可降低AlGaN / GaN HEMT中的泄漏电流
机译:AlGaN / GaN电流调节二极管
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:具有混合沟槽阴极的高精度AlGaN / GaN反向阻挡CRD(RB-CRD)
机译:AlN和GaN脉冲比在热原子层沉积AlGaN上的影响AlGaN in AlGaN / GaN肖特基二极管电学性能
机译:Nichia alGaN / InGaN / GaN蓝色发光二极管的寿命试验