TERAHERTZ QUANTUM INTERFERENCE TRANSISTORS (QUIT) USING ONE-DIMENSIONAL MODFET-TYPE ELECTRON WAVEGUIDES

摘要

A one-dimensional quantum interference transistor (1-D QUIT) structure consisting of two MODFET-type electron waveguides is presented. Our calculations show that the unity current-gain cut-off frequency (f_T) of the 1-D QUIT with a channel length of 0.25 μm is greater than 1 THz. The transconductance per unit gate width of the device is about two times better than the 2-D QUIT reported in the literature.