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Time resolved studies of intersubband relaxation in GaAs/AlGaAs quantum wells below the optical phonon energy using a free electron laser

机译:使用自由电子激光在光子能量以下的GaAs / AlGaAs量子阱中子带间弛豫的时间分辨研究

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The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of the two lowest subbands is smaller than the optical phonon energy, is considered. Time resolved pump-and-probe measurements are performed with a far-infrared free-electron laser on two multiquantum well samples with similar thicknesses (≈ 300 A), but different doping and mobilities. The measured lifetimes are shorter than could be explained by acoustic phonon emission alone. Monte-Carlo calculations show the importance of electron-electron scattering for thermalization of the hot electron distribution function and subsequent optical phonon emission from the long thermal tail.
机译:考虑了GaAs / GaAs量子阱中子带间弛豫的问题,其中两个最低子带的能量间隔小于光子声子能量。在两个具有相似厚度(≈300 A)但掺杂和迁移率不同的多量子阱样品上,用远红外自由电子激光进行时间分辨的泵浦和探针测量。测得的寿命比仅通过声子声子发射所能解释的寿命短。蒙特卡洛计算表明,电子-电子散射对于热电子分布函数的热化以及随后从长热尾部发出光子的重要性。

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